DC Power Probes
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Related Pages
Cascade Microtech's power device probes provide a complete on-wafer solution for over-temperature, low-contact resistance measurements of power seimconductors up to 60A and 3000V.
High-Current Parametric (HCP) Probe
Designed specifically for testing power devices on wafer, the High-Current Parametric (HCP) Probe reduces probe and device destruction at high currents by minimizing contact resistance at the wafer-to-probe interface to prevent device heating at the tip. The innovative multi-finger design distributes the current over multiple contact points at the tip and is joined by a single heatsink which pulls heat from the probe tip. [View more]
High-Voltage Parametric (HVP) Probe
Cascade Microtech’s High-Voltage Parametric (HVP) Probe provides the capability to make triaxial/coaxial measurements up to up to 3,000V while preserving a low-noise measurement path. The HVP probe is engineered with proprietary insulation materials that prevent against dielectric breakdown to enable low leakage measurements as low as <1pA at high voltage (3000V). [View more]
