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C4S Resistivity 4-point Probe Head

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Fast, accurate and reliable resistivity testing

Your key to accurate characterization of on-wafer resistance properties, the C4S Resistivity 4-point probe head provides precise, repeatable measurements for faster, less-costly testing.

  • 50,000 accurate, repeatable measurements per probe head
  • Probe tip pressure is field adjustable to compensate for wear
  • Anodized-aluminum body electrically shields all active internal components
  • Built-in main compression spring through a semi-rigid spacer ensures equalized tip pressure even on uneven wafer surfaces
  • Unique composition nosepieces ensure smooth tip travel; outlast jeweled bearings
  • Available with full range of probe spacing, tip material and radii, and spring pressure choices

Specifications

  • Side deflection: 1.25 μm (0.05 mils) maximum 
  • Vertical stroke: 2.54 mm (100 mils) maximum
  • Spacing Accuracy: ±1%
  • Displacement Accuracy: 0.1%

Part Number
C4S-XY/WZ (X= Spacing, Y= Pressure, W= Tip Radius, Z= Tip Material)

Material to be measured

X = Spacing

Y = Pressure (per tip)

W = Tip Radius

Z = Tip Material

Silicon slices
Silicon ingots

4 = 1.25 mm (0.04")
5 = 1 mm (0.05")
6 = 1.55 mm (0.0625")

7 = 70-180 gms

0 = 50 μm/2 mils

O = Tungsten carbide

Gallium arsenide
Gallium phosphide
Arsenide

7 = 70-180 gms

7 = 17.5 μm/0.7 mils

O = Tungsten carbide

Semiconductor sheet resistance

4 = 40-70 gms

0 = 50 μm/ 2 mils
5 = 125 μm/5 mils

O = Tungsten carbide
S = Osmium

Thin metallic films

4 = 40-70 gms

1 = 250 μm/10 mils
5 = 125 μm/5 mils

S = Osmium