PM300WLR
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High-Throughput Wafer-Level Reliability Testing
Features and Benefits
- Get your data fast with multi-site reliability test at wafer-level
- Money-saving, unique chuck chamber minimizes nitrogen consumption and provides EMI/RFI shielding
- Handles multi-site, high-temperature probe cards with up to 5000 contacts
- Long-term tests at temperatures from -60°C to 350°C
- Simple ergonomic operation with large programmable microscope movement and pull-out chuck
The PM300WLR is the only dedicated probe system for wafer-level reliability (WLR) testing of substrates up to 300 mm. The PM300WLR provides quick, accurate results before the device is packaged. This means critical reliability information for design and process improvement is delivered faster and at significantly lower costs than with traditional testing of packaged devices.
As a dedicated probe system, only the PM300WLR provides the ideal environment for extremely accurate, high-temperature, multi-site, high-throughput wafer-level reliability measurements. These measurements include electromigration (EM) for determining the reliability of copper and aluminum interconnects, time dependent dielectric breakdown (TDDB) for gate oxide reliability measurements, and hot-carrier injection (HCI) and negative-bias temperature instability (NBTI) for determining the reliability of the transistor device.
EM test of devices that use copper or aluminum must be tested in an inert gas environment, usually nitrogen, to avoid oxidation. The unique design of the probe system includes a small, gas-tight chuck chamber to carefully control the consumption of inert gas – saving you costs in the long run.
