Power Device Probes

Cascade Microtech's power device probes provide a complete on-wafer solution for over-temperature, low-contact resistance measurements of power seimconductors up to 60A and 3000V.

 

High Current Parametric (HCP) Probe

High Current Parametric (HCP) Probe Designed specifically for testing power devices on wafer, the High Current Parametric Probe reduces probe and device destruction at high currents by minimizing contact resistance at the wafer-to-probe interface to prevent device heating at the tip. The innovative multi-finger design distributes the current over multiple contact points at the tip and is joined by a single heatsink which pulls heat from the probe tip.

High Voltage Parametric (HVP) Probe

High Voltage Parametric (HVP) Probe Cascade Microtech’s High Voltage Parametric Probe provides the capability to make coaxial measurements up to 3000V and triaxial measurements up to 1100V while preserving a low-noise measurement path. The HVP probe is engineered with proprietary insulation materials that prevent against dielectric breakdown to enable low leakage measurements as low as 100fA at high voltage (1100V).