Power Device Probes

Cascade Microtech's power device probes provide a complete on-wafer solution for over-temperature, low-contact resistance measurements of power seimconductors up to 60A and 3000V.

 

High-Current Parametric (HCP) Probe

High-Current Parametric (HCP) Probe Designed specifically for testing power devices on wafer, the High-Current Parametric (HCP) Probe reduces probe and device destruction at high currents by minimizing contact resistance at the wafer-to-probe interface to prevent device heating at the tip. The innovative multi-finger design distributes the current over multiple contact points at the tip and is joined by a single heatsink which pulls heat from the probe tip.

High-Voltage Parametric (HVP) Probe

High-Voltage Parametric (HVP) Probe Cascade Microtech’s High-Voltage Parametric (HVP) Probe provides the capability to make coaxial measurements up to 10,000V and triaxial measurements up to 3,000V while preserving a low-noise measurement path. The HVP probe is engineered with proprietary insulation materials that prevent against dielectric breakdown to enable low leakage measurements as low as 100fA at high voltage (1100V).