Tesla: On-Wafer Power Device Characterization System
Tesla solves the challenge of thin wafers, power dissipation and current/voltage requirements
- The High Current Parametric (HCP) probe is designed to meet the needs of Rds(on) measurements. A unique design minimizes thermal runaway at the probe to wafer contact while supporting up to 10A of current in continuous mode and up to 60A of current in pulsed mode.
- The High Voltage Parametric (HVP) probe enables breakdown voltage measurements as low as 1pA at 3000V.
- Exclusive Vacuchannel™ chuck technology meets the needs for today’s power device wafers with state-of-the-art handling for thin wafers as thin as 100um. In addition, the Vacuchannel technology handles power dissipating devices like no other solution available today enabling on-wafer measurements for devices up to 75W.
| Tesla: The industry's first complete system for on-wafer power device characterization | |||
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| Product Brochure | System Highlights | Datasheet | Q & A |
| Problems Solved: Overcoming the challenges of wafer-level power device characterization | ||||
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| Challenge | High Current Probe | High Voltage Probe | Vacuchannel Chuck | T200 Station |
| Handling thin wafers |  | |||
| Rds(on) Measurements | | | | |
| High-current probe burnout | | |||
| Low-leakage measurement at high voltage | | | | |
| Safety for device, operator and probing equipment | | | | |
| Related Web Pages |
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| High Voltage Parametric (HVP) Probe |
| High Current Parametric (HCP) Probe |
