Current Events

 

European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC)

September 6, 2010 - September 10, 2010
Feria Valencia, Valencia, Spain


Poster Presentation
Si-wafer based PV modules consist of many single solar cells. The best match of these cells within the module guarantees the maximum output, because the worst cell is essential for the overall behaviour of the module. Exact and repeatable classification of the solar cells is the basis for the availability of the maximum power, having been produced, until the cells having reached the roof. While being tested, the cells have reached maximum value in the cell production chain. Therefore the loss of cells by damaging them in this step causes the biggest waste of value. How to improve the critical final test process of the cell and possibly other electrical test steps during cell production will be discussed.


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MEMUNITY Workshop: Wafer Level Testing for Fabrication of Intelligent Microsystems

September 15, 2010
IVAM, Emil Figge Str. 76, Dortmund, Germany


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MOS-AK Workshop

September 17, 2010
Barceló Renacimiento Hotel, Seville, Spain


Workshop Presentation: Progress in Applying On-Wafer Calibration Techniques for Advanced High-Speed Silicon Technologies


On-wafer RF calibration methods are compared to the conventional Impedance Standard Substrate (ISS) calibration combined with dummies de-embedding approach for transistors of an advanced silicon process. We discuss the design of customized calibration standards, addressing specifics of the silicon process. Our results show that on-wafer calibration methods are the most suitable approaches for accurate characterization of sub-THz transistors.

Poster Presentation: Techniques for accurate flicker noise measurement up to 40 MHz
With the advancement of semiconductor devices and their applications, needs for accurate, repeatable and reliable flicker noise data has becoming more and more desirable for accurate device characterization, as well as process development. This paper describes how to achieve high-precision on-wafer flicker noise measurement up to frequency as high as 40 MHz. The techniques required to ensure reliable on-wafer flicker noise characterization, such as preventing external noise influence on the measurement set up, as well as minimizing system residual capacitance to achieve higher frequency bandwidth, are discussed. The measurement results of various types of devices are also presented.


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European Microwave Week

September 26, 2010 - October 1, 2010
CNIT, Paris, France

  • Technical Workshop:
    Solving Multi-contact RF Probe Measurement Challenges
    (September 30, 9:30 am - 10:45 am (Cartier 2)
  • 500 GHz probing solution demo
  • Custom/speciality probe display


[ Website ] [ Register ] [ Event Details ]


IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

October 4, 2010 - October 6, 2010
Radisson Hotel & Suites - Town Lake, Austin, TX

Technical Paper: Application of On-Wafer Calibration Techniques for Advanced High-Speed BiCMOS Technology
On-wafer RF calibration methods are compared to the conventional Impedance Standard Substrate (ISS) calibration combined with dummies de-embedding approach for transistors of an advanced BiCMOS process. We discuss the design of Silicon customized calibration standards, addressing specifics of the silicon BiCMOS process. Our results show that on-wafer calibration methods, such as multiline TRL or LRM+, are the most suitable approaches.


[ Website ]